Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
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Authors
Gao, Qiang
Joyce, Hannah J
Paiman, Suriati
Kim, Yong
Smith, Leigh M
Jackson, Howard E
Yarrison-Rice, Jan M
Zhang, Xin
Zou, Jin
Jagadish, Chennupati
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IEEE
Abstract
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.
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2009 14th OptoElectronics and Communications Conference, OECC 2009
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2037-12-31
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