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Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

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Date

2009

Authors

Gao, Qiang
Joyce, Hannah J
Paiman, Suriati
Kim, Yong
Smith, Leigh M
Jackson, Howard E
Yarrison-Rice, Jan M
Zhang, Xin
Zou, Jin
Jagadish, Chennupati

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.

Description

Keywords

Keywords: GaAs; II-IV semiconductors; InP; MOCVD; Research activities; VLS mechanism; Chemical vapor deposition; Crystal growth; Electric wire; Nanowires; Optoelectronic devices; Semiconducting gallium; Semiconductor devices; Gallium alloys

Citation

URI

http://hdl.handle.net/1885/84099

Collections

ANU Research Publications

Source

2009 14th OptoElectronics and Communications Conference, OECC 2009

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/OECC.2009.5219756

Restricted until

2037-12-31

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Description
01_Gao_Epitaxy_of_III-V_semiconductor_2009.pdf (22.35 KB)

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