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Shape Engineering of InP Nanostructures by Selective Area Epitaxy

Date

2019-06-10

Authors

Wang, Naiyin
yuan, xiaoming
Zhang, Xu
Gao, Qian
Zhao, Bijun
Li, Li (Lily)
Lockrey, Mark
Tan, Hark Hoe
Jagadish, Chennupati
Caroff, Philippe

Journal Title

Journal ISSN

Volume Title

Publisher

American Chemical Society

Abstract

Greater demand for III−V nanostructures with more sophisticated geometries other than nanowires is expected because of the recent intensive investigation of nanowire networks that show great potential in all-optical logic gates, nanoelectronics, and quantum computing. Here, we demonstrate highly uniform arrays of InP nanostructures with tunable shapes, such as membrane-, prism-, and ring-like shapes, which can be simultaneously grown by selective area epitaxy. Our in-depth investigation of shape evolution confirms that the shape is essentially determined by pattern confinement and the minimization of total surface energy. After growth optimization, all of the different InP nanostructures grown under the same growth conditions show perfect wurtzite structure regardless of the geometry and strong and homogeneous photon emission. This work expands the research field in terms of producing nanostructures with the desired shapes beyond the limits of nanowires to satisfy various requirements for nanoelectronics, optoelectronics, and quantum device applications.

Description

Keywords

InP, selective area epitaxy (SAE), MOVPE, nanomembranes, nanorings, nanofaceting, surface energy

Citation

Source

ACS Nano

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1021/acsnano.9b02985

Restricted until

2037-12-31