Electrical Properties of Compact Drop-Casted Cu2SnS3 Films
Loading...
Date
Authors
Ghediya, Prashant
Chaudhuri, Tapas K.
Raj, Vidur
Vankhade, Dhaval
Tan, Hark Hoe
Jagadish, Chennupati
Journal Title
Journal ISSN
Volume Title
Publisher
Springer
Abstract
We investigated temperature-dependent electrical conduction of Cu2SnS3 (CTS) thin films in the range of 77-500 K synthesized by drop-casting molecular ink. The films were directly formed by drop-casted molecular ink, consisting of a Cu+2-Sn+2-thiourea complex dissolved in a mixture of ethylene glycol-isopropyl alcohol and annealed. The CTS films have a smooth layer with a compact structure, as revealed by cross-sectional scanning electron microscopy. The films are p-type and show a band gap of 1.18 eV. The electrical conductivity and Hall mobility of the films were found to be 1.1 S/cm and 6.72 cm2 V1 s1 , respectively. Data from temperature-dependent measurements show hopping and thermally activated conduction below and above 300 K, with an activation energy of 10 and 90 meV, respectively. Our results suggest that the drop-casted CTS films can be used as an absorber layer in thin film solar cells at an affordable cost.
Description
Citation
Collections
Source
Journal of Electronic Materials
Type
Book Title
Entity type
Access Statement
License Rights
Restricted until
2099-12-31