Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Persistent enhancement of the carrier density in electron irradiated InAs nanowires

Thumbnail Image

Date

2013

Authors

Durand, Corentin
Berthe, M.
Makoudi, Younes
Nys, J.P.
Leturcq, Renaud
Caroff, Philippe
Grandidier, B.

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Physics Publishing

Abstract

We report a significant and persistent enhancement of the conductivity in free-standing non-intentionally doped InAs nanowires upon irradiation in ultra-high vacuum. Combining four-point probe transport measurements performed on nanowires with different s

Description

Keywords

Keywords: Field effects; Four-point probe; Inas nanowires; Nanowire surface; Radiation induced defects; Surface free; Carrier concentration; Electric properties; Electron beams; Surface chemistry; Surface defects; Nanowires

Citation

URI

http://hdl.handle.net/1885/77638

Collections

ANU Research Publications

Source

Nanotechnology

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1088/0957-4484/24/27/275706

Restricted until

2037-12-31

Downloads

File
Description
01_Durand_Persistent_enhancement_of_the_2013.pdf (784.75 KB)

DSpace software copyright © 2002-2026 LYRASIS

abcd