Fast 1 kV metal-oxide-semiconductor field-effect transistor switch
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Dedman, C. J.
Roberts, E. H.
Gibson, S. T.
Lewis, B. R.
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American Institute of Physics (AIP)
Abstract
A fast, high-voltage switch based on cheap and readily available components is described. This simple circuit can switch 1 kV to ground with a fall time of ∼2.5 ns, and has proved a cost-effective means of driving electrostatic gating and rereferencing devices in pulsed ion-beam experiments.
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Review of Scientific Instruments
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