Bulk Lifetimes up to 20 ms Measured on Unpassivated Silicon Discs Using Photoluminescence Imaging

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dc.contributor.authorChung, Daniel
dc.contributor.authorMitchell, Bernhard
dc.contributor.authorGoodarzi, Mohsen
dc.contributor.authorSun, Ryan
dc.contributor.authorMacDonald, Daniel
dc.contributor.authorTrupke, Thorsten
dc.date.accessioned2020-12-20T20:51:47Z
dc.date.available2020-12-20T20:51:47Z
dc.date.issued2017
dc.date.updated2020-11-23T10:17:00Z
dc.description.abstractWith high-efficiency silicon solar cells approaching 25% efficiency in mass production, the requirements on the bulk lifetime and its uniformity across the wafer and the ingot increase dramatically. Since some cell architectures require these high lifetimes on starting material, the need arises for characterization methods to measure very high bulk lifetimes that are spatially resolved at an early stage before cell processing. A method based on the spectral ratio of two photoluminescence images is applied here on two unpassivated silicon discs from different positions within a Czochralski-grown phosphorous-doped n-type silicon ingot. The method allows the determination of spatially resolved bulk lifetime images on samples with adequate thickness and can be done within seconds and without the need to passivate surfaces. As-grown bulk lifetimes up to 20 ms are measured on the ingot's central disc, indicating recent improvements in crystallization technology, but are strongly reduced closer to the crown. Evidence suggesting the impact of thermal donors on the lifetime and effective doping concentration near the crown is found from combining spectral photoluminescence and infrared spectroscopy analyses. The technique could find applications in research and development activities, particularly in the optimization of Czochralski silicon crystal growth conditions
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/217886
dc.language.isoen_AUen_AU
dc.publisherIEEE
dc.sourceIEEE Journal of Photovoltaics
dc.titleBulk Lifetimes up to 20 ms Measured on Unpassivated Silicon Discs Using Photoluminescence Imaging
dc.typeJournal article
local.bibliographicCitation.issue2
local.bibliographicCitation.lastpage449
local.bibliographicCitation.startpage444
local.contributor.affiliationChung, Daniel, University of New South Wales
local.contributor.affiliationMitchell, Bernhard, University of New South Wales
local.contributor.affiliationGoodarzi, Mohsen, College of Engineering and Computer Science, ANU
local.contributor.affiliationSun, Ryan, College of Engineering and Computer Science, ANU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.affiliationTrupke, Thorsten, University of New South Wales
local.contributor.authoremailu5408594@anu.edu.au
local.contributor.authoruidGoodarzi, Mohsen, u5518978
local.contributor.authoruidSun, Ryan, u5408594
local.contributor.authoruidMacDonald, Daniel, u9718154
local.description.notesImported from ARIES
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.ariespublicationa383154xPUB6351
local.identifier.citationvolume7
local.identifier.doi10.1109/JPHOTOV.2016.2644984
local.identifier.scopusID2-s2.0-85009854716
local.identifier.thomsonID000399991500005
local.identifier.uidSubmittedBya383154
local.type.statusPublished Version

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