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Characterization of GaSb nanowires grown by MOVPE

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Date

2008

Authors

Jeppsson, Mattias
Dick, Kimberley A.
Nilsson, H
Skold, Niklas
Wagner, Jakob B
Caroff, Philippe
Wernersson, Lars-Erik

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth.

Description

Keywords

Keywords: Crystal growth; Electric wire; Gallium; Gallium alloys; Gallium compounds; Metallorganic vapor phase epitaxy; Microscopic examination; Nanostructured materials; Nanowires; A1. Nanowires; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Gallium c A1. Nanowires; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Gallium compounds

Citation

URI

http://hdl.handle.net/1885/82419

Collections

ANU Research Publications

Source

Journal of Crystal Growth

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.jcrysgro.2008.07.061

Restricted until

2037-12-31

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01_Jeppsson_Characterization_of_GaSb_2008.pdf (469.06 KB)

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