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Proton Implantation and Rapid Thermal Annealing Effects on GaAs/A1GaAs Quantum Well Infrared Photodetectors

Date

Authors

Li, Na

Lu, W

Liu, Qiuxiang

Yuan, Shu

Li, Zhi-Chang

Dou, H

Shen, S

Li, Ning

Publisher

Academic Press

Abstract

We report the use of intermixing techniques to modify GaAs/AlGaAs multiple quantum wells (MQWs). A large shift in the response wavelength of the GaAs/AlGaAs MQW-based infrared photodetector is obtained by proton implantation and then a standard annealing

Keywords

Keywords: Charge carriers; Composition effects; Crystal atomic structure; Heterojunctions; Interdiffusion (solids); Ion implantation; Protons; Rapid thermal annealing; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor quantum wells;

URI

http://hdl.handle.net/1885/93699

Collections

ANU Research Publications

Source

Superlattices and Microstructures

Type

Journal article

DOI

10.1006/spmi.1999.0785

Restricted until

2037-12-31

Downloads

File

Description

01_Li_Proton_Implantation_and_Rapid_1999.pdf (148.45 KB)

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