Hydrogenation in doped poly-Si passivated contact solar cells

Abstract

In c-Si solar cells, doped poly-Si/SiOx stacks both form carrier selective junctions and provide excellent surface passivation. They are key components of novel passivating-contact solar cell structures.  The doped poly-Si films often contain a high density of defects which can potentially affect the quality of the passivating-contact structures and thus the overall performance of the solar cells.  Hydrogenation techniques could be used to passivate defects within the doped poly-Si films themselves to improve the overall performance of doped poly-Si/SiOx passivating contacts. Here, we explore such possibilities Show more