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Nonvolatile-Memory Characteristics of AlO − -Implanted Al 2 O 3

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Date

2009

Authors

Kim, Min Choul
Kim, Sung
Choi, Suk Ho
Belay, Kidane
Elliman, Robert
Russo, Salvy P

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention. Photoconductivity spectra show the existence of two dominant trap levels, located at around 2 and 4 eV below the conduction band minimum of Al2O3, and our calculations show that these levels are likely attributed to the defects in the Al2O3, such as the Al-O divacancy. The relative concentrations of these defects vary with the implant fluence and are shown to explain the NVM characteristics of the samples irradiated to different fluences.

Description

Keywords

Keywords: Al 2 O 3 ; AlO - ion implantation; Conduction-band minimum; Deep trap; Divacancies; Fluences; High temperature; Non-volatile; Nonvolatile-memory (NVM); Photoconductivity spectrum; Program/erase; Relative concentration; Trap lev Al2O3; AlO- ion implantation; Deep trap; Nonvolatile-memory (NVM)

Citation

URI

http://hdl.handle.net/1885/50911

Collections

ANU Research Publications

Source

IEEE Electron Device Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/LED.2009.2024440

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