Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealing

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dc.contributor.authorLiu, Qiu Xiangen_AU
dc.contributor.authorLu, Wen_AU
dc.contributor.authorLi, Zhong Huien_AU
dc.contributor.authorChen, Yong Jen_AU
dc.contributor.authorShen, Sen_AU
dc.contributor.authorFu, Yen_AU
dc.contributor.authorWillander, Men_AU
dc.contributor.authorYuan, Shuen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorZou, Jinen_AU
dc.contributor.authorCockayne, David John Hughen_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-13T23:34:16Z
dc.date.issued1999
dc.date.updated2015-12-12T09:35:24Z
dc.description.abstractSingle Al0.5Ga0.5As/GaAs V-groove quantum wires (QWR) modified by selective implantation and rapid thermally annealing were investigated by spatially resolved microphotoluminescence (micro-PL). The PL from the necking region was clearly observed at room temperature. Optical properties of QWR and the adjacent quantum well structures were strongly degraded by the implantation. The recovery properties of the PL signals from all the structures were dependent on the implantation dose. A critical dose of 1 × 1013 cm-2 was found for the selective implantation, over which the PL from the necking region could not be recovered. Also the blueshifts of QWR and the necking-region PL peaks were observed for all the annealed samples. This blueshift is caused by the interface intermixing, which is very useful to increase the confinement of carriers in QWR region for optoelectronic device applications.
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/93394
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceApplied Physics Letters
dc.titleSpatially resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealing
dc.typeJournal article
local.bibliographicCitation.lastpage3341
local.bibliographicCitation.startpage3339
local.contributor.affiliationLiu, Qiu Xiang, Guangdong University of Technology
local.contributor.affiliationLu, W, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLi, Zhong Hui, Hong Kong Baptist University
local.contributor.affiliationChen, Yong J, Tsinghua University
local.contributor.affiliationShen, S, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationFu, Y, Gotenburg University
local.contributor.affiliationWillander, M, Gotenburg University
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationYuan, Shu, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationCockayne, David John Hugh, University of Oxford
local.contributor.authoruidLu, W, u931508
local.contributor.authoruidShen, S, u2530537
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidYuan, Shu, u951429
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub24736
local.identifier.citationvolume75
local.identifier.scopusID2-s2.0-0000856355
local.type.statusPublished Version

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