Direct comparison of boron, phosphorus, and aluminum gettering of iron in crystalline silicon

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dc.contributor.authorPhang, S. P.
dc.contributor.authorMacdonald, D.
dc.date.accessioned2015-12-03T00:16:49Z
dc.date.available2015-12-03T00:16:49Z
dc.date.issued2011-04-13
dc.date.updated2016-02-24T11:03:12Z
dc.description.abstractThis paper presents a direct quantitative comparison of the effectiveness of borondiffusion, phosphorus diffusion, and aluminumalloying in removing interstitial iron in crystalline silicon in the context of silicon solar cells. Phosphorus diffusion gettering was effective in removing more than 90% of the interstitial iron across a range of diffusion temperatures, sheet resistances, and iron doses. Even relatively light phosphorus diffusions (145 Ω/□) were found to give very effective gettering, especially when combined with extended low temperature annealing.Aluminumalloying was extremely effective and removed more than 99% of the implanted iron for a range of alloying temperatures and aluminum film thicknesses. In contrast, our experimental results showed that borondiffusion gettering is very sensitive to the deposition conditions and can change from less than 5% of the Fe being gettered to more than 99.9% gettered by changing only the gas flow ratios and the post-oxidation step.
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16985
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 3/12/15). Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.3569890
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Aluminum film; Aluminum gettering; Boron diffusions; Crystalline silicons; Deposition conditions; Diffusion temperature; Gas-flow ratio; Gettering; Interstitial iron; Low temperature annealing; Phosphorus diffusion; Post-oxidation; Quantitative comparison
dc.titleDirect comparison of boron, phosphorus, and aluminum gettering of iron in crystalline silicon
dc.typeJournal article
local.bibliographicCitation.issue7en_AU
local.bibliographicCitation.lastpage6
local.bibliographicCitation.startpage073521en_AU
local.contributor.affiliationPhang, Sieu Pheng, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.authoremailpheng.phang@anu.edu.auen_AU
local.contributor.authoruidu4188633en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor090605en_AU
local.identifier.absseo850504en_AU
local.identifier.ariespublicationu4334215xPUB807en_AU
local.identifier.citationvolume109en_AU
local.identifier.doi10.1063/1.3569890en_AU
local.identifier.scopusID2-s2.0-79955367543
local.identifier.thomsonID000289949000048
local.identifier.uidSubmittedByu3488905en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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