Proton Irradiation-induced Intermixing in In x Ga 1-x As/InP Quantum Wells - the Effect of In Composition

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dc.contributor.authorGareso, Paulusen_AU
dc.contributor.authorBuda, Manuelaen_AU
dc.contributor.authorFu, Lanen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorDao, Lap Vanen_AU
dc.contributor.authorWen, Xen_AU
dc.contributor.authorHannaford, Peteren_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-13T22:36:50Z
dc.date.issued2006
dc.date.updated2015-12-11T09:33:47Z
dc.description.abstractWe have investigated atomic intermixing in InxGa 1-xAs/InP quantum well (QW) structures induced by proton irradiation using photoluminescence (PL) and time-resolved photoluminescence. Photoluminescence results revealed that energy shift was systematically decreased as irradiation temperature was increased, followed by a broadening of the PL linewidth and reduction of the PL intensity. Time-resolved photoluminescence results at room temperature showed that the capture time of carriers in the quantum well region which reflects in the rise time of PL intensity is different for various quantum well structures with different strain and the carrier collection efficiency enhanced in the intermixed QWs. The time evolution of PL intensity also indicates that intermixing changes the strain profile of three QWs.
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/1885/76965
dc.publisherInstitute of Physics Publishing
dc.sourceSemiconductor Science and Technology
dc.subjectKeywords: Carrier concentration; Electron energy levels; Mixing; Photoluminescence; Proton irradiation; Semiconducting indium compounds; Energy shift; Intermixing; Room temperature; Time-resolved photoluminescence; Semiconductor quantum wells
dc.titleProton Irradiation-induced Intermixing in In x Ga 1-x As/InP Quantum Wells - the Effect of In Composition
dc.typeJournal article
local.bibliographicCitation.lastpage1446
local.bibliographicCitation.startpage1441
local.contributor.affiliationGareso, Paulus, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBuda, Manuela, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationFu, Lan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationDao, Lap Van, Swinburne University of Technology
local.contributor.affiliationWen, X, Swinburne University of Technology
local.contributor.affiliationHannaford, Peter, Swinburne University of Technology
local.contributor.authoruidGareso, Paulus, u3930310
local.contributor.authoruidBuda, Manuela, u4012377
local.contributor.authoruidFu, Lan, u9715386
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020501 - Classical and Physical Optics
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub5799
local.identifier.citationvolume21
local.identifier.doi10.1088/0268-1242/21/10/013
local.identifier.scopusID2-s2.0-33748869907
local.type.statusPublished Version

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