Proton Irradiation-induced Intermixing in In x Ga 1-x As/InP Quantum Wells - the Effect of In Composition
Date
2006
Authors
Gareso, Paulus
Buda, Manuela
Fu, Lan
Jagadish, Chennupati
Dao, Lap Van
Wen, X
Hannaford, Peter
Tan, Hark Hoe
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Institute of Physics Publishing
Abstract
We have investigated atomic intermixing in InxGa 1-xAs/InP quantum well (QW) structures induced by proton irradiation using photoluminescence (PL) and time-resolved photoluminescence. Photoluminescence results revealed that energy shift was systematically decreased as irradiation temperature was increased, followed by a broadening of the PL linewidth and reduction of the PL intensity. Time-resolved photoluminescence results at room temperature showed that the capture time of carriers in the quantum well region which reflects in the rise time of PL intensity is different for various quantum well structures with different strain and the carrier collection efficiency enhanced in the intermixed QWs. The time evolution of PL intensity also indicates that intermixing changes the strain profile of three QWs.
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Keywords: Carrier concentration; Electron energy levels; Mixing; Photoluminescence; Proton irradiation; Semiconducting indium compounds; Energy shift; Intermixing; Room temperature; Time-resolved photoluminescence; Semiconductor quantum wells
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Semiconductor Science and Technology
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Journal article
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2037-12-31
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