The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors

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dc.contributor.authorJolley, Gen_AU
dc.contributor.authorMcKerracher, Ien_AU
dc.contributor.authorFu, Lanen_AU
dc.contributor.authorJagadish, C.en_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-10-28T23:20:34Z
dc.date.available2015-10-28T23:20:34Z
dc.date.issued2012-06-26
dc.date.updated2016-02-24T10:19:18Z
dc.description.abstractWe report on a theoretical study of the relationship between interdiffusion and the conduction bandoptical absorption of In(Ga)As/GaAs quantum dots.Quantum dot geometries are progressively interdiffused based on Fick’s model and the quantum dot strain, band structure and optical absorption cross-section are calculated numerically. Quantifying the effects of interdiffusion on quantum dotoptical absorption is important for applications that utilize post-growth techniques such as selective area intermixing.
dc.description.sponsorshipThanks are due to the Australian Research Council for the financial support of this research.en_AU
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16157
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 29/10/15). Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.4729833
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Absorption cross-section; Fick's model; InGaAs/GaAs; Quantum dot infrared photodetector; Selective areas; Theoretical study; Conduction bands; Light absorption; Semiconductor quantum dots
dc.titleThe conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors
dc.typeJournal article
local.bibliographicCitation.issue12en_AU
local.bibliographicCitation.startpage123719en_AU
local.contributor.affiliationJolley, Greg, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationMcKerracher, Ian, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationFu, Lan, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidu4041632en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020504en_AU
local.identifier.absfor090605en_AU
local.identifier.absseo970102en_AU
local.identifier.ariespublicationU3594520xPUB489en_AU
local.identifier.citationvolume111en_AU
local.identifier.doi10.1063/1.4729833en_AU
local.identifier.scopusID2-s2.0-84863535696
local.identifier.thomsonID000305832100071
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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