The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors
Date
2012-06-26
Authors
Jolley, G
McKerracher, I
Fu, Lan
Jagadish, C.
Tan, Hark Hoe
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American Institute of Physics (AIP)
Abstract
We report on a theoretical study of the relationship between interdiffusion and the conduction bandoptical absorption of In(Ga)As/GaAs quantum dots.Quantum dot geometries are progressively interdiffused based on Fick’s model and the quantum dot strain, band structure and optical absorption cross-section are calculated numerically. Quantifying the effects of interdiffusion on quantum dotoptical absorption is important for applications that utilize post-growth techniques such as selective area intermixing.
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Keywords: Absorption cross-section; Fick's model; InGaAs/GaAs; Quantum dot infrared photodetector; Selective areas; Theoretical study; Conduction bands; Light absorption; Semiconductor quantum dots
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Journal of Applied Physics
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