Temperature dependent frequency tuning of NbOx relaxation oscillators
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Nandi, Sanjoy
Li, Shuai (Jack)
Liu, Xinjun
Elliman, Robert
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American Institute of Physics (AIP)
Abstract
This study investigates the temperature dependence of current-controlled negative differential resistance (CC-NDR) in Pt/NbOx/TiN devices and its effect on the dynamics of associated Pearson-Anson relaxation oscillators. The voltage range over which CC-NDR is observed decreases with increasing temperature such that no NDR is observed for temperatures above ~380 K. Up to this temperature, relaxation oscillators exhibit voltage and temperature dependent oscillation frequencies in the range of 1 to 13 MHz. Significantly, the sensitivity of the frequency to temperature changes was found to be voltage-dependent, ranging from 39.6 kHz/K at a source voltage of 2 V to 110 kHz/K at a source voltage of 3 V, in the temperature range of 296–328 K. Such a behaviour provides insights into temperature tolerance and tuning variability for environmentally sensitive neuromorphic computing.
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Applied Physics Letters
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