The state filling effect in p-doped InGaAs/GaAs quantum dots

Date

2007

Authors

Wen, XiaoMing
Dao, Lap Van
Hannaford, Peter
Mokkapati, Sudha
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Physics Publishing

Abstract

The electron dynamics in modulation p-doped InGaAs/GaAs self-assembled quantum dots have been studied by time-integrated and time-resolved up-conversion photoluminescence. A significant state filling effect is observed with exclusion of the phonon bottleneck effect. The rise time and decay time are found to vary with the excitation intensity for the ground state and excited states of the quantum dots. In the low intensity regime the rise time decreases with increasing excitation intensity because of the increased scattering between the photoexcited electrons and excess holes. By contrast, in the high excitation regime the rise time exhibits a slight decrease due to the state filling effect. A simplified rate equation model indicates that the modulation p-doped quantum dots exhibit an increasing saturation factor with increasing detection photon energy based on the theory of parabolic confinement of the quantum dots, which is consistent with the observed excitation dependence.

Description

Keywords

Keywords: Phonons; Phosphorus; Photoexcitation; Photoluminescence; Semiconducting indium gallium arsenide; Semiconductor doping; Electron dynamics; Photon energy; Saturation factors; State filling effects; Semiconductor quantum dots

Citation

Source

Journal of Physics: Condensed Matter

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

Restricted until

2037-12-31