Electronic Conduction Properties of Au/C 60 /p-Si and C 60 /Au/p-Si Sandwich Structures:  I-V and Transducer Characteristics

Berdinsky, A.S.; Fink, Dietmar; Yoo, J B; Chadderton, Lewis; Chun, H.G.; Han, J H; Dragunov, V.P.

Electronic Conduction Properties of Au/C 60 /p-Si and C 60 /Au/p-Si Sandwich Structures: I-V and Transducer Characteristics

Date

2004

Authors

Berdinsky, A.S.

Fink, Dietmar

Yoo, J B

Chadderton, Lewis

Chun, H.G.

Han, J H

Dragunov, V.P.

Publisher

Pergamon-Elsevier Ltd

Abstract

Gold-fullerite [C 60]-silicon (p-type) sandwich structures have been fabricated in order to investigate intrinsic cross-sectional and planar electronic conductive properties, in particular the C 60/p-Si p-n heterojunction. The turn-on voltage of this p-n