Pt nanocrystals formed by ion implantation: a defect-mediated nucleation process
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Giulian, R.
Kluth, P.
Araujo, L. L.
Llewellyn, D. J.
Ridgway, M. C.
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American Institute of Physics (AIP)
Abstract
The influence of ion irradiation of SiO₂ on the size of metalnanocrystals (NCs) formed by ion implantation has been investigated. Thin SiO₂ films were irradiated with high-energy Ge ions then implanted with Pt ions. Without Geirradiation, the largest Pt NCs were observed beyond the Pt projected range. With irradiation, Ge-induced structural modification of the SiO₂ layer yielded a decrease in Pt NC size with increasing Ge fluence at such depths. A defect-mediated NC nucleation mechanism is proposed and a simple yet effective means of modifying and controlling the Pt NC size is demonstrated.
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Applied Physics Letters
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