Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process

Date

2007

Authors

Joyce, Hannah J
Gao, Qiang
Jagadish, Chennupati
Kim, Yong
Zhang, Xin
Guo, YaNan
Zou, Jin
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Chemical Society

Abstract

We demonstrate vertically aligned epitaxial GaAs nanowires of excellent cristallographic quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. This is achieved by a two-temperature growth procedure, consisting of a brief initial high-temperature growth step followed by prolonged growth at a lower temperature. The initial high-temperature step is essential for obtaining straight, vertically aligned epitaxial nanowires on the (111)B GaAs substrate. The lower temperature employed for subsequent growth imparts superior nanowire morphology and crystallographic quality by minimizing radial growth and eliminating twinning defects. Photoluminescence measurements confirm the excellent optical quality of these two-temperature grown nanowires. Two mechanisms are proposed to explain the success of this two-temperature growth process, one involving Au nanoparticle-GaAs interface conditions and the other involving melting-solidification temperature hysteresis of the Au-Ga nanoparticle alloy.

Description

Keywords

Keywords: Crystallography; Epitaxial growth; High temperature operations; Interfaces (materials); Metallorganic chemical vapor deposition; Semiconducting gallium arsenide; Gold nanoparticles; Radial growth; Twinning defects; Nanowires; gallium; gallium arsenide; na

Citation

Source

Nano Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1021/nl062755v

Restricted until

2037-12-31