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Growth of Stacked InAs/InP Quantum Dot Structures

Date

Authors

Barik, Satyanarayan

Jagadish, Chennupati

Tan, Hark Hoe

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

We report on the growth of self-assembled InAs/InP quantum dots (QDs) on the lattice matched GaInAsP buffer by low pressure Metal Organic Chemical Vapor Deposition and discuss the effects of a thin GaAs interlayer, the QD growth time, and the V/III ratio

Keywords

Keywords: Arsenic compounds; Chemical reactions; Crystallography; Ecology; Epitaxial growth; Gallium; Gallium alloys; Ion beam assisted deposition; Light emission; Linewidth; Low pressure chemical vapor deposition; Luminescence; Metallizing; Metals; Nanoscience; Na InAs/InP quantum dots; Metal-organic chemical vapor deposition

URI

http://hdl.handle.net/1885/26827

Collections

ANU Research Publications

Source

Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology

Type

Conference paper

DOI

10.1109/ICONN.2006.340651

Restricted until

2037-12-31

Downloads

File

Description

01_Barik_Growth_of_Stacked_InAs/InP_2006.pdf (4.15 MB)

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