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Erbium Emission from Nanoengineered Silicon Surface

Date

Authors

Sekhar, P

Wilkinson, Andrew

Elliman, Robert

Kim, Tae-Hyun

Bhansali, Shekhar

Publisher

American Chemical Society

Abstract

Optically active SiOx nanowires were grown on silicon by ion-implanting it with metallic impurities and annealed at 1100 °C in an Ar ambient. The implanted metals precipitate on the silicon surface and act as catalysts for nanowire growth. Ion implantati

Keywords

Keywords: Argon ambient; Er-doped; Erbium emissions; Erbium-doped; Integrated biosensors; Luminescence lifetimes; Metallic impurities; Multi metals; Nano-switches; Nanowire growths; Optical densities; Optical emissions; Optically actives; Photoluminescence emission

URI

http://hdl.handle.net/1885/37590

Collections

ANU Research Publications

Source

Journal of Physical Chemistry C

Type

Journal article

DOI

10.1021/jp808462j