Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer

Park, Sangsu; Jung, Seungjae; Siddik, Manzar; Jo, Minseok; Lee, Joonmyoung; Park, Jubong; Lee, Wootae; Kim, Seonghyun; Sadaf, Sharif Md.; Liu, Xinjun; Hwang, Hyunsang

Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer

Date

2011

Authors

Park, Sangsu

Jung, Seungjae

Siddik, Manzar

Jo, Minseok

Lee, Joonmyoung

Park, Jubong

Lee, Wootae

Kim, Seonghyun

Sadaf, Sharif Md.

Liu, Xinjun

Publisher

Wiley-VCH Verlag GMBH

Abstract

We propose a homogeneous nanoscaled (∅ 250 nm) bilayered Pr0.7Ca0.3MnO3 (PCMO)-based memory device that exhibits low power and good memristive switching behavior. Accurate control of the oxygen-deficient (PCMO3-x) layer thickness promotes oxygen migrati