Shell formation in InGaAs Nanowires Driven by Lattice Latching and Polarity Effect
Loading...
Date
Authors
Guo, Y.
Zou, Jin
Burgess, Timothy
Gao, Qiang
Jagadish, Chennupati
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
A novel phenomenon of an asymmetric shell formation is observed within the zinc blende structured InGaAs nanowires. It is found that three Ga-rich zones are formed along <112>A directions, while three In-rich zones are formed along <112>B directio
Description
Citation
Collections
Source
COMMAD 2012 Proceedings
Type
Book Title
Entity type
Access Statement
License Rights
Restricted until
2037-12-31
Downloads
File
Description