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Protection of Si-Sio2 interfaces from damp heat by overlying SiNx and Si3N4 coatings

Date

Authors

DAI, Xi

McIntosh, Keith

Publisher

IEEE

Abstract

PECVD SiNx antireflection coatings are found to suppress the degradation of an underlying oxide during "damp-heat" exposure. Samples are submitted to 85 °C and 85% relative humidity, replicating the damp-heat conditions of the standard reliability tests

Keywords

Keywords: A-thermal; Damp heat; Diffusion of water; Elevated temperature; Emitter saturation current density; Heat conditions; High efficiency; Oxide thickness; Presence of water; PV modules; Relative humidities; Reliability test; Silicon cells; Atmospheric humidit

URI

http://hdl.handle.net/1885/83917

Collections

ANU Research Publications

Source

Conference Record of the IEEE Photovoltaic Specialists Conference

Type

Conference paper

DOI

10.1109/PVSC.2010.5616776

Restricted until

2037-12-31

Downloads

File

Description

01_DAI_Protection_of_Si-Sio2_2010.pdf (44.53 KB)

02_DAI_Protection_of_Si-Sio2_2010.pdf (877.59 KB)