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HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers

Date

Authors

Sathish, N

Dhamodaran, S

Pathak, AP

Krishna, Ghanashyam

Khan, SA

Avasthi, DK

Pandey, A

Muralidharan, R

Jagadish, Chennupati

Li, G

Publisher

Elsevier

Abstract

Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates are irradiated with 150 MeV Ag ions at a fluence of 5 × 1012 ions/cm2. Samples used in this study are 2 μm thick GaN layers, with and without a thin AlN cap-layer. Surface morphology is

Keywords

Keywords: Atomic force microscopy; Epitaxial layers; Gallium nitride; Ion bombardment; Metallorganic chemical vapor deposition; X ray diffraction; High resolution X-ray diffraction (HRXRD); Irradiation induced-damages; Residual strain; Heavy ions AFM; HRXRD; Ion irradiation; Optical and GaN

URI

http://hdl.handle.net/1885/21374

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/j.nimb.2006.12.060

Restricted until

2037-12-31

Downloads

File

Description

01_Sathish_HRXRD,_AFM_and_optical_study_2007.pdf (710.6 KB)