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Thermal Annealing Study on InGaAs/GaAs Quantum Dot Infrared Photodetectors

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Date

2006

Authors

Fu, Lan
McKerracher, Ian
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

In this work, rapid thermal annealing was performed on InGaAs/GaAs quantum dot infrared photodetectors (QDIPs) at different temperatures. The photoluminescence showed a blue-shifted wavelength and the spectral response exhibited red-shift from the annealed QDIPs in comparison with the as-grown sample. The overall device performance was not affected by low annealing temperature however for high annealing temperature, some degradation in device detectivity (but not responsivity) was observed. This is a consequence of increased dark current due to defect formation and increased ground state energy.

Description

Keywords

Keywords: Infrared detectors; Nanoscience; Nanotechnology; Optical waveguides; Optoelectronic devices; Photodetectors; Quantum electronics; Rapid thermal annealing; Rapid thermal processing; Semiconductor quantum dots; Sulfate minerals; Annealing temperature (Ta); Interdiffusion; Metalorganic chemical vapor deposition; Quantum dot infrared photodetector; Rapid thermal annealing

Citation

URI

http://hdl.handle.net/1885/27124

Collections

ANU Research Publications

Source

Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/ICONN.2006.340661

Restricted until

2037-12-31

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Description
01_Fu_Thermal_Annealing_Study_on_2006.pdf (281.81 KB)

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