Amorphous group IV semiconductors

dc.contributor.authorRidgway, Mark C
dc.date.accessioned2016-02-24T22:40:42Z
dc.date.issued2015
dc.date.updated2016-02-24T08:07:59Z
dc.description.abstractThe amorphous Group IV semiconductors are of technological significance and scientific importance. As an example of the former, amorphous Si has widespread use in thin-film transistors while, as an example of the latter, structural determinations of amorphous Ge are invaluable in assessing the validity of Continuous Random Network models. The application of XAS to the study of the elemental and binary amorphous Group IV semiconductors is now described and we demonstrate XAS is an ideal technique to study the structural and vibrational properties of these materials. A commonality in amorphous phase structure is apparent including an increase in disorder and bondlength and a decrease in coordination number relative to the crystalline phase.
dc.identifier.isbn9783662443613
dc.identifier.urihttp://hdl.handle.net/1885/98415
dc.publisherSpringer
dc.relation.ispartofX-Ray Absorption Spectroscopy of Semiconductors
dc.relation.isversionof1 Edition
dc.titleAmorphous group IV semiconductors
dc.typeBook chapter
local.bibliographicCitation.lastpage163
local.bibliographicCitation.placeofpublicationNew York
local.bibliographicCitation.startpage145
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.authoremailrepository.admin@anu.edu.au
local.contributor.authoruidRidgway, Mark C, u9001886
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020400 - CONDENSED MATTER PHYSICS
local.identifier.absfor091200 - MATERIALS ENGINEERING
local.identifier.absfor100700 - NANOTECHNOLOGY
local.identifier.ariespublicationa383154xPUB907
local.identifier.doi10.1007/978-3-662-44362-0_7
local.identifier.scopusID2-s2.0-84921648754
local.identifier.uidSubmittedBya383154
local.type.statusPublished Version

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