Quantum well intermixing by ion implantation
| dc.contributor.author | Barnett, Anne | en_AU |
| dc.date.accessioned | 2003-01-13 | en_US |
| dc.date.accessioned | 2004-05-19T15:29:23Z | en_US |
| dc.date.accessioned | 2011-01-05T08:47:35Z | |
| dc.date.available | 2004-05-19T15:29:23Z | en_US |
| dc.date.available | 2011-01-05T08:47:35Z | |
| dc.date.issued | 2002 | |
| dc.description.abstract | The work carried out in this study explored the phenomenon of ion implantation induced intermixing in quantum well structures. Two quantum well systems were investigated; the unstrained GaAs/Al_xGa_(1-x)As system, and the strained In_xGa_(1-x)As/GaAs system. Previous results from proton and arsenic implantation into these systems were verified, and new work on Boron implantation was conducted to test the medium mass ion regime. | en_US |
| dc.format.extent | 1781395 bytes | en_US |
| dc.format.mimetype | application/pdf | en_US |
| dc.identifier.other | b37574292 | |
| dc.identifier.uri | http://hdl.handle.net/1885/41355 | |
| dc.language.iso | en_AU | en_US |
| dc.subject | Quantum wells | en_US |
| dc.subject | ion implantation | en_US |
| dc.subject | proton | en_US |
| dc.subject | arsenic | en_US |
| dc.subject | boron | en_US |
| dc.title | Quantum well intermixing by ion implantation | en_US |
| dc.type | Thesis (Honours) | en_US |
| local.contributor.affiliation | ANU | en_US |
| local.contributor.affiliation | Department of Electronic Materials Engineering, RSPSE | en_US |
| local.description.refereed | no | en_US |
| local.identifier.citationmonth | nov | en_US |
| local.identifier.citationyear | 2002 | en_US |
| local.identifier.doi | 10.25911/5d7a28b23b256 | |
| local.identifier.eprintid | 762 | en_US |
| local.mintdoi | mint | |
| local.rights.ispublished | no | en_US |
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