Quantum well intermixing by ion implantation

Abstract

The work carried out in this study explored the phenomenon of ion implantation induced intermixing in quantum well structures. Two quantum well systems were investigated; the unstrained GaAs/Al_xGa_(1-x)As system, and the strained In_xGa_(1-x)As/GaAs system. Previous results from proton and arsenic implantation into these systems were verified, and new work on Boron implantation was conducted to test the medium mass ion regime. Show more