Understanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions
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Fujisawa, N.
Ruffell, S.
Bradby, J. E.
Williams, J. S.
Haberl, Bianca
Warren, O. L.
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American Institute of Physics (AIP)
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Cyclic indentation of crystalline silicon exhibits interesting pressure-induced phase-transformation behavior whereby sequential changes in the phase composition ultimately lead to a catastrophic (“pop-out”) event during subsequent cycles and complete transformation to high pressure Si-III and Si-XII phases. This study combines in situ electrical measurements with cyclic loading to monitor such phase-transformation behavior. We find that, if a pop-out is not observed on the unloading curve, the end phase is predominantly amorphous but a small and increasing volume of Si-III/Si-XII results with each cycle. At a critical Si-III/Si-XII volume, pop-out can occur on a subsequent cycle, whereafter Si-III/Si-XII dominates the indent volume.
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Journal of Applied Physics
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