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Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

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Date

2007-12-26

Authors

Mishra, A.
Titova, L. V.
Hoang, T. B.
Jackson, H. E.
Smith, L. M.
Yarrison-Rice, J. M.
Kim, Y.
Joyce, H. J.
Gao, Q.
Jagadish, C.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

We use polarization-resolved and temperature-dependent photoluminescence of single zincblende (ZB) (cubic) and wurtzite (WZ) (hexagonal) InPnanowires to probe differences in selection rules and bandgaps between these two semiconductor nanostructures. The WZ nanowires exhibit a bandgap80meV higher in energy than the ZB nanowires. The temperature dependence of the PL is similar but not identical for the WZ and ZB nanowires. We find that ZB nanowires exhibit strong polarization parallel to the nanowire axis, while the WZ nanowires exhibit polarized emission perpendicular to the nanowire axis. This behavior is interpreted in terms of the different selection rules for WZ and ZB crystal structures.

Description

Keywords

Keywords: Crystal structure; Indium phosphide; Photoluminescence; Polarization; Thermal effects; Semiconductor nanostructures; Temperature dependence; Wurtzite nanowires; Zincblende; Nanowires

Citation

URI

http://hdl.handle.net/1885/95006

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

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DOI

10.1063/1.2828034

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