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Thickness-dependent Stress in Plasma-deposited Silicon Dioxide Films

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Date

2005

Authors

Au, Vicky
Charles, Christine
Bulla, Douglas
Love, John
Boswell, Roderick

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Thick silicon dioxide (SiO2) films up to 5 μm have been deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) as both bilayer and trilayer structures, and the film stress was investigated i

Description

Keywords

Keywords: Buffer layers; Film deposition; Helicon activated reactive evaporation (HARE); Waveguide fabrication; Birefringence; Coalescence; Electron beams; Evaporation; Film growth; Interfaces (materials); Nanostructured materials; Optical waveguides; Photoluminesc

Citation

URI

http://hdl.handle.net/1885/79836

Collections

ANU Research Publications

Source

Journal of Applied Physics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.1870116

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