Irradiation Fluence Dependent Microstructural Evolution of Porous InSb

Date

2006

Authors

Kluth, Susan
Llewellyn, David
Ridgway, Mark C

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

Ion irradiation of InSb yields not only amorphization but also causes the material to become porous. This irradiation-induced porosity in InSb has been investigated using implantation of 1 MeV 69Ga+ ions. Initially, voids form which then develop into a sponge-like structure. Further irradiation generates a network of rods ∼20 nm in diameter. The precursors to porosity, i.e. small voids and dislocation loops, are apparent with transmission electron microscopy in the damaged region below the porous layer. Rutherford backscattering spectrometry and channeling indicates that damage to the crystalline lattice builds up more rapidly in implants performed at liquid nitrogen temperature than at room temperature.

Description

Keywords

Keywords: Amorphization; Crystal lattices; Crystalline materials; Ion implantation; Microstructure; Porosity; Rutherford backscattering spectroscopy; Transmission electron microscopy; III-V semiconductors; InSb; Porous semiconductors; Voids; Indium compounds III-V semiconductors; InSb; Ion implantation; Porous semiconductors

Citation

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.nimb.2005.08.182

Restricted until

2037-12-31