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Power Transistors

Date

Authors

Fletcher, Neville H.

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

The factors which limit the power handling capacity of ordinary transistors are examined and it is shown how these limitations can be overcome. By making use of the geometrical freedom afforded by the alloy junction process, transistors can be constructed to handle powers in the kilowatt range.

Description

Keywords

Citation

Source

Proceedings of the IRE

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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