Mid-infrared InAsSb quantum dots with high emission efficiency

Date

2010

Authors

Lei, Wen
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

Mid-infrared emission with high efficiency was achieved for InAsSb quantum dots by using InGaAsSb sandwich layers and InP carrier blocking layers. As a result of reduced quantum confinement and lattice mismatch around InAsSb quantum dots caused by InGaAsSb layers, an emission of 2.1 μm was obtained for the sample with In0.53Ga0.47As0.25Sb0.75 layers. The emission signal was observed up to 330 K by using InP carrier blocking layers to suppress the thermal escape of carriers.

Description

Keywords

Keywords: Carrier-blocking layers; Emission efficiencies; Emission signal; High efficiency; InGaAsSb; InP; Mid-infrared emission; Midinfrared; Quantum Dot; Thermal escape; Gallium; Indium antimonides; Infrared devices; Lattice mismatch; Microelectronics; Semiconduc

Citation

Source

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Type

Conference paper

Book Title

Entity type

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Restricted until

2037-12-31