Mid-infrared InAsSb quantum dots with high emission efficiency
Date
2010
Authors
Lei, Wen
Jagadish, Chennupati
Tan, Hark Hoe
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Publisher
IEEE
Abstract
Mid-infrared emission with high efficiency was achieved for InAsSb quantum dots by using InGaAsSb sandwich layers and InP carrier blocking layers. As a result of reduced quantum confinement and lattice mismatch around InAsSb quantum dots caused by InGaAsSb layers, an emission of 2.1 μm was obtained for the sample with In0.53Ga0.47As0.25Sb0.75 layers. The emission signal was observed up to 330 K by using InP carrier blocking layers to suppress the thermal escape of carriers.
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Keywords
Keywords: Carrier-blocking layers; Emission efficiencies; Emission signal; High efficiency; InGaAsSb; InP; Mid-infrared emission; Midinfrared; Quantum Dot; Thermal escape; Gallium; Indium antimonides; Infrared devices; Lattice mismatch; Microelectronics; Semiconduc
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Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Type
Conference paper
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2037-12-31
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