Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures

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dc.contributor.authorPemasiri, Kurananandaen_AU
dc.contributor.authorMontazeri, Mohammaden_AU
dc.contributor.authorGass, Richarden_AU
dc.contributor.authorSmith, Leigh Men_AU
dc.contributor.authorJackson, Howard Een_AU
dc.contributor.authorYarrison-Rice, Jan Men_AU
dc.contributor.authorPaiman, Suriatien_AU
dc.contributor.authorGao, Qiangen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorZhang, Xinen_AU
dc.contributor.authorZou, Jinen_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-10T22:30:34Z
dc.date.issued2009
dc.date.updated2016-02-24T10:36:54Z
dc.description.abstractWe use time-resolved photoluminescence from single InP nanowires containing both wurtzite (WZ) and zincblende (ZB) crystalline phases to measure the carrier dynamics of quantum confined excitons in a type-ll homostructure. The observed recombination lifetime increases by nearly 2 orders of magnitude from 170 ps for excitons above the conduction and valence band barriers to more than 8400 ps for electrons and holes that are strongly confined in quantum wells defined by monolayer-scale ZB sections in a predominantly WZ nanowire. A simple computational model, guided by detailed high-resolution transmission electron microscopy measurements from a single nanowire, demonstrates that the dynamics are consistent with the calculated distribution of confined states for the electrons and holes.
dc.identifier.issn1530-6984
dc.identifier.urihttp://hdl.handle.net/1885/55146
dc.publisherAmerican Chemical Society
dc.sourceNano Letters
dc.subjectKeywords: Carrier dynamics; Computational models; Confined excitons; Crystalline phasis; High-resolution transmission electron microscopies; Homostructures; Inp; Orders of magnitudes; Quantum wells; Recombination lifetimes; Single nanowires; Time-resolved photolumi
dc.titleCarrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures
dc.typeJournal article
local.bibliographicCitation.issue2
local.bibliographicCitation.lastpage654
local.bibliographicCitation.startpage648
local.contributor.affiliationPemasiri, Kuranananda, University of Cincinnati
local.contributor.affiliationMontazeri, Mohammad, University of Cincinnati
local.contributor.affiliationGass, Richard, University of Cincinnati
local.contributor.affiliationSmith, Leigh M , University of Cincinnati
local.contributor.affiliationJackson, Howard E , University of Cincinnati
local.contributor.affiliationYarrison-Rice, Jan M , University of Miami
local.contributor.affiliationPaiman, Suriati, College of Engineering and Computer Science, ANU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZhang, Xin, University of Queensland
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.authoruidPaiman, Suriati, u4256436
local.contributor.authoruidGao, Qiang, u4006742
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor100708 - Nanomaterials
local.identifier.ariespublicationu4133361xPUB320
local.identifier.citationvolume9
local.identifier.doi10.1021/n1802997p
local.identifier.scopusID2-s2.0-65249152412
local.identifier.thomsonID000263298700024
local.type.statusPublished Version

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