InAs Quantum Dots Grown on InGaAs Buffer Layers by Metal-Organic Chemical Vapor Deposition
Date
2005
Authors
Stewart Sears, Kalista
Wong-Leung, Jennifer
Jagadish, Chennupati
Tan, Hark Hoe
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Volume Title
Publisher
Elsevier
Abstract
InAs quantum dots were deposited onto GaAs or onto a thin (nominally 7 ML) InxGa1-xAs layer (x=0.075 or 0.15) by metal-organic chemical vapor deposition and compared using photoluminescence measurements, plan-view transmission electron microscopy (TEM) and atomic force microscopy (AFM). The photoluminescence intensity was considerably reduced for samples grown using an InGaAs buffer layer. This is correlated with the formation of dislocations (density=1.5(±1)×108cm-2) making them unsuitable for incorporation into devices requiring high optical efficiency.
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Keywords
Keywords: Characterization; Defects; Metallorganic chemical vapor deposition; Nanostructured materials; Photoluminescence; Semiconducting indium compounds; Semiconducting indium gallium arsenide; Semiconductor growth; Semiconductor materials; Transmission electron A1. Characterization; A1. Defects; A1. Nanostructures; A3. Metal-organic vapor phase epitaxy; B2. Semiconducting III-V materials
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Source
Journal of Crystal Growth
Type
Journal article
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2037-12-31