InAs Quantum Dots Grown on InGaAs Buffer Layers by Metal-Organic Chemical Vapor Deposition

Date

2005

Authors

Stewart Sears, Kalista
Wong-Leung, Jennifer
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

InAs quantum dots were deposited onto GaAs or onto a thin (nominally 7 ML) InxGa1-xAs layer (x=0.075 or 0.15) by metal-organic chemical vapor deposition and compared using photoluminescence measurements, plan-view transmission electron microscopy (TEM) and atomic force microscopy (AFM). The photoluminescence intensity was considerably reduced for samples grown using an InGaAs buffer layer. This is correlated with the formation of dislocations (density=1.5(±1)×108cm-2) making them unsuitable for incorporation into devices requiring high optical efficiency.

Description

Keywords

Keywords: Characterization; Defects; Metallorganic chemical vapor deposition; Nanostructured materials; Photoluminescence; Semiconducting indium compounds; Semiconducting indium gallium arsenide; Semiconductor growth; Semiconductor materials; Transmission electron A1. Characterization; A1. Defects; A1. Nanostructures; A3. Metal-organic vapor phase epitaxy; B2. Semiconducting III-V materials

Citation

Source

Journal of Crystal Growth

Type

Journal article

Book Title

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2037-12-31