Two-dimensional electron gas related emissions in ZnMgO/ZnO heterostructures
Date
2011-11-22
Authors
Chen, Hui
Gu, Shulin
Liu, Jiagao
Ye, Jiandong
Tang, Kun
Zhu, Shunming
Zheng, Youdou
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American Institute of Physics (AIP)
Abstract
Radiative recombination of two-dimensional electron gas(2DEG), induced by polarization and validated by Hall effect measurements, is investigated in ZnMgO/ZnO heterostructures grown by metal-organic chemical vapor deposition. The Mg composition, the depth profile distribution of Mg, the residual strain in ZnMgO caplayer, and the thickness of caplayer all significantly influence the 2DEG-related transitions in ZnMgO/ZnO heterostructures. Below or above ZnO donor bound exciton, three additional broad emissions persisting up to 100 K are assigned to the spatially indirect transitions from 2DEG electrons to the photoexcited holes towards the ZnO flat-band region or remaining at the heterointerface.
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Keywords: Depth profile distributions; Donor-bound exciton; Flat band; Hall effect measurement; Hetero interfaces; Indirect transition; Photoexcited holes; Radiative recombination; Residual strains; Two-dimensional electron gas (2DEG); ZnMgO; ZnO; Crystals; Gas emi
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Applied Physics Letters
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Journal article
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