Growth and characterization of self-assembled InAs/InP quantum dot structures

Date

2010

Authors

Barik, Satyanarayan
Wong-Leung, Jennifer
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Scientific Publishers

Abstract

InAs quantum dots (QDs) are grown on InP or lattice matched GaInAsP buffers using horizontal flow metal-organic chemical vapor deposition (MOCVD) at a pressure of 180 mbar. A range of techniques, such as photoluminescence (PL), atomic force microscopy, and plan-view transmission electron microscopy is used to characterize the QD and other semiconductor layers. The effects of different growth parameters, such as V/III ratio and growth time, and the effects of buffer layers, interlayers, and cap layers are investigated and the optimized growth conditions are discussed. In the case of the QDs grown on InP buffers, the As/P exchange reaction is found to be prominent. A very thin (0.6 nm) GaAs interlayer grown between the buffer and the QD layers consumes segregated indium and minimizes the As/P exchange reaction. As a result, the QD PL emission energy increases, the PL intensity improves, and the PL linewidth decreases. The experimental results show that by changing the thickness of a GaAs interlayer (0.3-0.6 nm), the emission wavelength/energy of the QDs grown on a lattice matched GaInAsP buffer can be tuned over a wide range covering 1550 nm. However, further increase in the thickness of the GaAs interlayer results In the agglomeration of the QDs and the deterioration of the QD optical properties. Detailed microscopy studies show that capped QDs have higher density and are smaller in size on average compared to uncapped QDs, which undergo coalescence during cooling of the sample after growth. Overall, the QDs grown for shorter time with a smaller V/III ratio (∼8) show improved PL intensity and narrower PL linewidth.

Description

Keywords

Keywords: 1550 nm; Cap layers; Exchange reaction; GaAs; GaInAsP; Growth conditions; Growth parameters; Growth time; Horizontal flows; Inas quantum dots; InAs/InP; InP; Lattice-matched; Metalorganic chemical vapor deposition; MOCVD; PL emission energies; PL intensit Growth of self-assembled quantum dots; InAs/InP quantum dots; MOCVD; Optical properties

Citation

Source

Journal of Nanoscience and Nanotechnology

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1166/jnn.2010.2024

Restricted until

2037-12-31