Ion Beam Induced Epitaxy Experiments in Silicon under Channeling and Random Alignments
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Williams, James
Young, I M
Conway, Martin
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Elsevier
Abstract
This paper examines issues arising in ion beam induced epitaxial crystallisation (IBIEC) of both surface and buried amorphous silicon layers at 320°C under random and channeled alignment of MeV C+ beams. These issues include: random versus channeled ener
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Nuclear Instruments and Methods in Physics Research: Section B
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Restricted until
2037-12-31