Characterization of resistive switching states in W/Pr0.7Ca 0.3MnO3 for a submicron (f250 nm) via-hole structure
Date
2011
Authors
Siddik, Manzar
Biju, Kuyyadi P.
Liu, Xinjun
Lee, Joonmyoung
Kim, Insung
Kim, Seonghyun
Lee, Wootae
Jung, Seungjae
Lee, Daeseok
Sadaf, Sharif Md.
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Japan Society of Applied Physics
Abstract
Analysis of asymmetric current-voltage (I-V) of low resistance state (LRS) and high resistance state (HRS) in a W/Pr0.7Ca0.3MnO3 (PCMO) submicron (φ250 nm) resistive memory device revealed the formation of a Schottky-like contact in both states. Raman sp
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Keywords: Current voltage; High-resistance state; Intensity difference; Low-resistance state; Material analysis; Memory device; Oxygen vacancy concentration; Resistive switching; Submicron; Via-hole; Manganese; Manganese oxide; Oxygen; Raman spectroscopy; Redox rea
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Japanese Journal of Applied Physics
Type
Journal article
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2037-12-31
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