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Characterization of resistive switching states in W/Pr0.7Ca 0.3MnO3 for a submicron (f250 nm) via-hole structure

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Date

2011

Authors

Siddik, Manzar
Biju, Kuyyadi P.
Liu, Xinjun
Lee, Joonmyoung
Kim, Insung
Kim, Seonghyun
Lee, Wootae
Jung, Seungjae
Lee, Daeseok
Sadaf, Sharif Md.

Journal Title

Journal ISSN

Volume Title

Publisher

Japan Society of Applied Physics

Abstract

Analysis of asymmetric current-voltage (I-V) of low resistance state (LRS) and high resistance state (HRS) in a W/Pr0.7Ca0.3MnO3 (PCMO) submicron (φ250 nm) resistive memory device revealed the formation of a Schottky-like contact in both states. Raman sp

Description

Keywords

Keywords: Current voltage; High-resistance state; Intensity difference; Low-resistance state; Material analysis; Memory device; Oxygen vacancy concentration; Resistive switching; Submicron; Via-hole; Manganese; Manganese oxide; Oxygen; Raman spectroscopy; Redox rea

Citation

URI

http://hdl.handle.net/1885/65569

Collections

ANU Research Publications

Source

Japanese Journal of Applied Physics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1143/JJAP.50.105802

Restricted until

2037-12-31

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01_Siddik_Characterization_of_resistive_2011.pdf (425.32 KB)

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