Impact of Al Doping on Surface Passivation of TiOx on Si
Date
2020
Authors
RSD, Systems
Liang, Wensheng
Tong, Jingnan
Narangari, Parvathala Reddy
Armand, Stephane
Kho, Teng Choon
Ernst, Marco
Walter, Daniel
Surve, Sachin
McIntosh, Keith
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Volume Title
Publisher
IEEE
Abstract
Titania (TiOx) is re-emerging to be a passivating material for the surfaces of high-efficiency crystalline silicon solar cells. Numerous sources in the literature suggest that the surface passivation and thermal stability of TiOx deteriorates with increasing film thickness when the TiOx film is thicker than a sufficient thickness. To circumvent this limitation, this study presents a novel process of Al-doped TiOx (TiOx:Al) film, which demonstrates the potential for improved thermal stability and surface passivation. Based on grazing incident X-ray diffraction and UV-Raman measurements, the incorporation of Al impurity in TiOx effectively restrains the crystal phase transformation of the amorphous TiOx layer during deposition. Furthermore, the TiOx:Al films provide better thermal robustness up to 350 °C, which makes it highly compatible with Si solar cell fabrication processes.
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Keywords
Doping, solar cell, surface passivation, TiO2
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Source
IEEE Journal of Photovoltaics
Type
Journal article
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Restricted until
2099-12-31
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