Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon
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Wong-Leung, Jennifer
Fatima, S
Jagadish, Chennupati
Fitz Gerald, John
Chou, C
Zou, Jin
Cockayne, David John Hugh
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American Institute of Physics (AIP)
Abstract
Extended defects created in Si by ion implantation to doses below the amorphization threshold have been studied after annealing at 800 °C for 15 min. The implant species were the group IV elements Si, Ge, and Sn, and structural defects created by similar
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Journal of Applied Physics
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2037-12-31
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