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Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon

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Date

2000

Authors

Wong-Leung, Jennifer
Fatima, S
Jagadish, Chennupati
Fitz Gerald, John
Chou, C
Zou, Jin
Cockayne, David John Hugh

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Extended defects created in Si by ion implantation to doses below the amorphization threshold have been studied after annealing at 800 °C for 15 min. The implant species were the group IV elements Si, Ge, and Sn, and structural defects created by similar

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Citation

URI

http://hdl.handle.net/1885/26487

Collections

ANU Research Publications

Source

Journal of Applied Physics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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01_Wong-Leung_Transmission_Electron_2000.pdf (980.67 KB)

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