Electrical characterization of semiconductor nanowires by scanning tunneling microscopy

Date

2014

Authors

Durand, Corentin
Capiod, P.
Berthe, M.
Xu, Tao
Nys, J.P.
Leturcq, Renaud
Caroff, Philippe
Grandidier, B.

Journal Title

Journal ISSN

Volume Title

Publisher

SPIE - The International Society for Optical Engineering

Abstract

In order to understand the structural and electronic properties of semiconductor nanowires, scanning tunneling microscopy is an appealing technique that can supplement transmission electron microscopies and conventional electrical characterization techniques. It is able to probe the surface of semiconductor materials at the atomic scale and can be successfully applied to study the nanofaceting morphology, the atomic structure and the surface composition of oxide-free nanowire sidewalls. Based on the advantages provided by the unique geometry of semiconductor nanowires for a low-cost and efficient integration into nanoscale devices, additional characterization schemes performed with multiple probe scanning tunneling microscopy are also presented to get a deeper understanding of their transport properties.

Description

Keywords

Citation

Source

Proceedings of SPIE - The International Society for Optical Engineering

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1117/12.2042767

Restricted until

2037-12-31