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Carrier Transfer and Magneto-transport in Single Modulation-doped V-grooved Quantum Wire modified by Ion Implantation

Date

2006

Authors

Huang, Shao-Hua
Chen, Zhanghai H
Wang, Feng
Shen, S C
Fu, Lan
Fraser, Michael
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

A single Al0.5Ga0.5As/GaAs V-grooved quantum wire modified by selective ion implantation and rapid thermal annealing was investigated by using spatially resolved micro-photoluminescence spectroscopy and magneto-resistance measurements. The results of spatially resolved photoluminescence indicate that the ion-implantation-induced quantum well intermixing significantly raises the electronic sub-band energies in the side quantum wells (SQWs) and vertical quantum wells, and a more efficient accumulation of electrons in the quantum wires is achieved. Processes of real space carrier transfer from the SQW to the quantum wire was experimentally observed, and showed the blocking effect of carrier transfer due to the existence of the necking quantum well region. Furthermore, magneto-transport investigation on the ion-implanted quantum wire samples shows the quasi-one-dimensional intrinsic motion of electrons, which is important for the design and the optimization of one-dimensional electronic devices.

Description

Keywords

Keywords: Electron mobility; Ion implantation; Photoluminescence; Semiconductor quantum wells; Transport properties; Carrier transfer; Magneto-transport; Photoluminescence spectroscopy; Semiconductor quantum wires Carrier transfer; Ion implantation; Magneto-transport; Quantum wire

Citation

Source

Journal of Luminescence

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.jlumin.2005.12.061

Restricted until

2037-12-31