III-V compound semiconductor nanowires

Date

2009

Authors

Paiman, Suriati
Joyce, Hannah J
Kang, Jung-Hyun
Gao, Qiang
Kim, Yong
Zhang, Xin
Zou, Jin
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

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Publisher

IEEE

Abstract

InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.

Description

Keywords

Keywords: Crystal qualities; Defect-free; GaAs; Growth parameters; III-V compound semiconductor; InP; Metalorganic chemical vapor deposition; Research activities; V/III ratio; Vapor-liquid-solid mechanism; Crystal structure; Gallium alloys; Gallium arsenide; Nanowi

Citation

Source

2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

Type

Conference paper

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DOI

Restricted until

2037-12-31