Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements
Date
2005
Authors
Birkholz, Jens E.
Bothe, Karsten
Macdonald, Daniel
Schmidt, Jan
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American Institute of Physics (AIP)
Abstract
Iron-boron pairs in crystalline silicon are studied by measuring the recombination lifetime as a function of injection density, doping concentration, and temperature. The characteristic crossover point of the injection-level-dependent carrier lifetime curves measured before and after optical dissociation of the iron-boron pairs is analyzed to determine the energy level as well as the electron- and hole-capture cross sections of the acceptor level of iron-boron pairs, assuming known recombination parameters for interstitialiron. The doping concentration dependence of the crossover point gives an electron-capture cross section of (1.4±0.2)×10¯¹⁴cm², while the temperature dependence results in a hole-capture cross section in the range from 0.5×10¯¹⁵to2.5×10¯¹⁵cm² and an energy level of (0.26±0.02)eV below the conduction-band edge.
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Keywords: Contactless quasi-steady-state photoconductance (QSSPC) technique; Electronic parameters; Hole capture cross sections; Injection intensity; Doping (additives); Electron mobility; Electronic properties; Hole mobility; Mathematical models; Particle beam inj
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Journal of Applied Physics
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