Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Comparison of the Open Circuit Voltage of Simplified PERC Cells Passivated with PECVD Silicon Nitride and Thermal Silicon Oxide

Date

Authors

Kerr, Mark

Schmidt, Jan

Cuevas, Andres

Publisher

John Wiley & Sons Inc

Abstract

Plasma enhanced chemical vapor deposited silicon nitride films have been used to passivate both the front and rear surface of simplified PERC silicon solar cells (planar surface, single-step emitter). An independently confirmed open circuit voltage (Voc)

Keywords

Keywords: Electronic properties; Passivation; Photolithography; Plasma enhanced chemical vapor deposition; Silica; Silicon nitride; Voltage measurement; Conversion efficiency; Open circuit voltage; Silicon solar cells

URI

http://hdl.handle.net/1885/90432

Collections

ANU Research Publications

Source

Progress in Photovoltaics: Research and Applications

Type

Journal article

DOI

10.1002/1099-159X(200009/10)8:5<529::AID-PIP334>3.0.CO;2-6

Restricted until

2037-12-31

Downloads

File

Description

01_Kerr_Comparison_of_the_Open_Circuit_2000.pdf (135.23 KB)